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| Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode August 2006 FDFS6N754 Integrated N-Channel 30V, 4A, 56m Features PowerTrench(R) tm MOSFET and Schottky Diode General Description The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Max rDS(on) = 56m at VGS = 0V, ID = 4A Max rDS(on) = 75m at VGS = 4.5V, ID = 3.5A VF < 0.45V @ 2A VF < 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Low Gate Charge (Qg = 4nC) Low Miller Charge Applications DC/DC converters D C C D A1 A2 S G 8C 7C 6D 5D SO-8 Pin 1 S3 G4 A A MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating and Storage Temperature (Note 1a) (Note 1a) (Note 1a) Ratings 30 20 4 20 2 1.6 20 2 -55 to 150 Units V V A W V A C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDFS6N754 Device FDFS6N754 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDFS6N754 Rev. A 1 www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V VGS = 0V TJ = 125C 30 24.5 1 20 100 V mV/C A nA VGS = 20V, VDS = 0V On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VDS = VGS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 4A VGS = 4.5V, ID =3.5A VGS = 10V, ID = 4A, TJ = 125C VDS = 5V, ID = 4A 1 1.7 -4.2 42 53 61 10 56 75 81 S m 2.5 V mV/C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz f = 1.0MHz 225 80 42 5.1 299 107 63 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg(TOT) Qg(5) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 15V, ID = 4A VDD = 15V, ID = 1A VGS = 10V, RGS = 6 6 8 20 2 4 2 0.6 1 12 16 32 10 6 3 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.3A (Note 2) Reverse Recovery Time Reverse Recovery Charge IF = 4A, di/dt = 100A/s IF = 4A, di/dt = 100A/s 0.8 13 4 1.2 20 6 V ns nC Schottky Diode Characteristics VR IR Reverse Breakdown Voltage Reverse Leakage IR = 1mA VR = -10V IF = -100mA VF Forward Voltage IF = -2A 30 TJ = 25oC TJ = 25oC TJ = 25oC 39 18 225 140 364 290 450 280 mV 250 TJ = 125oC TJ = 125oC TJ = 125oC V A mA 2 FDFS6N754 Rev. A www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 3 FDFS6N754 Rev. A www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ 20 ID, DRAIN CURRENT (A) VGS = 10V VGS = 6V = 25C unless otherwise noted 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = 3.5V VGS = 3.0V VGS = 4.5V VGS = 5V 15 VGS = 5V 2.5 2.0 1.5 1.0 0.5 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = 3.5V VGS = 6V 10 5 VGS = 3V VGS = 2.5V VGS = 10V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. On-Resistance vs Drain Current and Gate Voltage 0.20 SOURCE ON-RESISTANCE (m) ID = 3A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -60 ID = 4A VGS = 10V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 0.15 rDS(on), DRAIN TO 0.10 TJ = 125oC 0.05 TJ = 25oC -30 0 30 60 90 120 150 0.00 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance vs Temperature Figure 4. On-Resistance vs Gate to Source Voltage 30 IS, REVERSE DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) 16 12 8 4 0 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VDS = 5V 10 VGS = 0V 1 TJ = 125oC TJ = 25oC TJ = 125oC TJ = -55oC TJ = 25oC 0.1 0.01 TJ = -55oC 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 FDFS6N754 Rev. A www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ VGS, GATE TO SOURCE VOLTAGE (V) 10 8 6 4 VDD = 10V = 25C unless otherwise noted 500 Ciss f = 1MHz VGS = 0V VDD = 20V CAPACITANCE (pF) 100 Coss VDD = 15V 2 0 Crss 0 1 2 3 4 5 20 0.1 Qg, GATE CHARGE (nC) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 7. Gate Charge Characteristics 10 9 8 7 6 5 4 3 2 TJ = 25oC Figure 8. Capacitance vs Drain to Source Voltage 6 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 5 4 3 VGS = 4.5V VGS = 10V 2 1 0 25 o RJC = 40 C/W 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 2 50 75 100 125 150 TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Switching Capability 100 ID, DRAIN CURRENT (A) 10us Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 VGS = 10V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 P(PK), PEAK TRANSIENT POWER (W) 100us 1 10 I = I25 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) TA = 25OC 1ms 10ms 100ms 1s 10s DC 150 - T A ----------------------125 0.01 0.1 1 10 -4 SINGLE PULSE 1 10 80 10 -3 VDS, DRAIN-SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -2 -1 0 10 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 5 FDFS6N754 Rev. A www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ IF, FORWARD LEAKAGE CURRENT (A) = 25C unless otherwise noted 0.1 TJ = 125oC 10 1 0.1 0.01 1E-3 0.0 IR, REVERSE LEAKAGE CURRENT (A) 100 TJ = 125oC 0.01 1E-3 1E-4 1E-5 20 1E-6 TJ = 25oC TJ = 25oC 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (V) 1.2 0 5 10 15 20 25 VR, REVERSE VOLATGE(V) 30 Figure 13. Schottky Diode Forward Voltage 2 1 Figure 14. Schottky Diode Reverse Current DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 NORMALIZED THERMAL IMPEDANCE, ZJA PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 SINGLE PULSE 0.01 -4 10 10 -3 10 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve 6 FDFS6N754 Rev. A www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production FDFS6N754 Rev. A 7 www.fairchildsemi.com |
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